When a MOSFET is used as a power switch, what happens to the MOSFET when the gate-to-source voltage (Vgs) is below the threshold voltage?
Think about what happens when the gate voltage is not enough to create a conducting channel.
If the gate-to-source voltage is below the threshold, the MOSFET channel does not form, so it behaves like an open switch and blocks current.
What is the main effect of the MOSFET's on-resistance (Rds(on)) when it is used as a power switch in a circuit?
Consider what happens when current flows through a resistance.
The on-resistance causes voltage drop and power dissipation as heat when current flows through the MOSFET, reducing efficiency.
You have a MOSFET with a threshold voltage of 4V and an on-resistance specified at 10V gate drive. Which gate drive voltage will ensure the MOSFET operates efficiently as a power switch?
Check the voltage at which the MOSFET's on-resistance is guaranteed low.
The MOSFET's on-resistance is specified at 10V gate drive, so applying 10V ensures it fully turns on with low resistance and efficient conduction.
Which statement correctly compares the use of N-channel and P-channel MOSFETs as power switches in high-side switching applications?
Consider the voltage levels needed to turn on each MOSFET type in high-side positions.
N-channel MOSFETs have lower on-resistance but need a gate voltage higher than the source voltage, which is challenging in high-side switching but often solved with special drivers.
In a power switching circuit using an N-channel MOSFET, what is the impact of the MOSFET's internal body diode during switching off in an inductive load circuit?
Think about what happens to current in an inductive load when the switch opens.
The body diode allows current to continue flowing when the MOSFET turns off, protecting the circuit from voltage spikes but causing some power loss due to diode conduction.
